ON Semiconductor
NVB110N65S3F
MOSFET SUPERFET3 650V D2PAK PKG
Basic Information
View Datasheet ↗- Manufacturer
- ON Semiconductor
- Product Category
- MOSFET
- Series
- SuperFET3
- Package
- TO-263-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
21 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 650 V
- Id - Continuous Drain Current
- 30 A
- Rds On - Drain-Source Resistance
- 110 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 3 V
- Vgs - Gate-Source Voltage
- 30 V
- Qg - Gate Charge
- 58 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 240 W
Show more parameters (9)
- Configuration
- Single
- Channel Mode
- Enhancement
- Qualification
- AEC-Q101
- Transistor Type
- 1 N-Channel
- Forward Transconductance - Min
- 17 S
- Fall Time
- 16 ns
- Rise Time
- 32 ns
- Typical Turn-Off Delay Time
- 61 ns
- Typical Turn-On Delay Time
- 29 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.