Vishay Semiconductors
SIS890DN-T1-GE3
MOSFETs 100V Vds 20V Vgs PowerPAK 1212-8
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay Semiconductors
- Product Category
- MOSFETs
- Series
- SIS
- Package
- PowerPAK-1212-8
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
24 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 100 V
- Id - Continuous Drain Current
- 30 A
- Rds On - Drain-Source Resistance
- 19.5 mOhms
- Vgs - Gate-Source Voltage
- - 20 V, 20 V
- Vgs th - Gate-Source Threshold Voltage
- 1.5 V
- Qg - Gate Charge
- 29 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 52 W
Show more parameters (12)
- Channel Mode
- Enhancement
- Tradename
- TrenchFET
- Configuration
- Single
- Country of Origin
- CN
- Fall Time
- 9 ns
- Forward Transconductance - Min
- 25 S
- Rise Time
- 12 ns
- Transistor Type
- 1 N-Channel
- Typical Turn-Off Delay Time
- 16 ns
- Typical Turn-On Delay Time
- 10 ns
- Part # Aliases
- SIS890DN-GE3
- Unit Weight
- 0.032487 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.