Nexperia
PMV250EPEAR
MOSFET 40V P-channel Trench MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- Nexperia
- Product Category
- MOSFET
- Package
- SOT-23-3
- Mounting Style
- SMD/SMT
- Packaging
- 40 V
- RoHS
- Compliant (source record)
Technical Specifications
26 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- P-Channel
- Vds - Drain-Source Breakdown Voltage
- 40 V
- Id - Continuous Drain Current
- 1.5 A
- Rds On - Drain-Source Resistance
- 240 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 1 V
- Vgs - Gate-Source Voltage
- 10 V
- Qg - Gate Charge
- 4.7 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 890 mW
Show more parameters (14)
- Configuration
- Single
- Channel Mode
- Enhancement
- Qualification
- AEC-Q101
- Height
- 1.1 mm
- Length
- 3 mm
- Product
- MOSFET
- Transistor Type
- 1 P-Channel Trench MOSFET
- Type
- Trench MOSFET
- Width
- 1.4 mm
- Fall Time
- 14 ns
- Rise Time
- 6 ns
- Typical Turn-Off Delay Time
- 26 ns
- Typical Turn-On Delay Time
- 4 ns
- Unit Weight
- 0.000282 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.