Diodes Incorporated
DMTH6012LPSWQ-13
MOSFETs MOSFET BVDSS: 41V 60V PowerDI5060-8/SWP T&R 2.5K
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- MOSFETs
- Package
- PowerDI5060-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
22 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 60 V
- Id - Continuous Drain Current
- 11.5 A
- Rds On - Drain-Source Resistance
- 14 mOhms
- Vgs - Gate-Source Voltage
- - 20 V, 20 V
- Vgs th - Gate-Source Threshold Voltage
- 2.3 V
- Qg - Gate Charge
- 13.6 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 2.8 W
Show more parameters (10)
- Channel Mode
- Enhancement
- Qualification
- AEC-Q101
- Configuration
- Single
- Country of Origin
- CN
- Fall Time
- 8.5 ns
- Rise Time
- 4.4 ns
- Transistor Type
- 1 N-Channel
- Typical Turn-Off Delay Time
- 14.7 ns
- Typical Turn-On Delay Time
- 3.2 ns
- Unit Weight
- 0.003422 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.