Infineon Technologies
FF450R07ME4B11BPSA1
IGBT Modules 650 V, 450 A dual IGBT module
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- IGBT Modules
- Packaging
- Tray
Technical Specifications
13 parameters- Product
- IGBT Silicon Modules
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 650 V
- Collector-Emitter Saturation Voltage
- 1.55 V
- Continuous Collector Current at 25 C
- 560 A
- Gate-Emitter Leakage Current
- 100 nA
- Pd - Power Dissipation
- 1.45 kW
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Country of Origin
- AT
- Technology
- Si
- Tradename
- EconoDUAL
Show more parameters (1)
- Part # Aliases
- FF450R07ME4_B11 SP005422472
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.