Vishay / Siliconix
SQS460ENW-T1_GE3
MOSFET 60V Vds -/+20V Vgs AEC-Q101 Qualified
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay / Siliconix
- Product Category
- MOSFET
- Series
- SQ
- Package
- PowerPAK-1212-8W-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
18 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 60 V
- Id - Continuous Drain Current
- 8 A
- Rds On - Drain-Source Resistance
- 36 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 2 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 13 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 39 W
Show more parameters (6)
- Configuration
- Single
- Qualification
- AEC-Q101
- Fall Time
- 8 ns
- Rise Time
- 8 ns
- Typical Turn-Off Delay Time
- 19 ns
- Typical Turn-On Delay Time
- 5 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.