Vishay / Siliconix
SI1416EDH-T1-BE3
MOSFETs SOT363 N-CH 30V 3.9A
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay / Siliconix
- Product Category
- MOSFETs
- Series
- SI1
- Package
- SOT-363-6
- Mounting Style
- SMD/SMT
- Packaging
- MouseReel
Technical Specifications
22 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Id - Continuous Drain Current
- 3.9 A
- Rds On - Drain-Source Resistance
- 58 mOhms
- Vgs - Gate-Source Voltage
- - 12 V, 12 V
- Vgs th - Gate-Source Threshold Voltage
- 1.4 V
- Qg - Gate Charge
- 12 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 1.56 W
Show more parameters (10)
- Channel Mode
- Enhancement
- Tradename
- TrenchFET
- Configuration
- Single
- Country of Origin
- TW
- Fall Time
- 50 ns
- Rise Time
- 30 ns
- Transistor Type
- 1 N-Channel
- Typical Turn-Off Delay Time
- 15 ns
- Typical Turn-On Delay Time
- 1.5 ns
- Part # Aliases
- SI1416EDH-T1-GE3
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.