Diodes Incorporated
DMTH69M9LPDW-13
MOSFETs MOSFET BVDSS: 41V 60V PowerDI5060-8/SWP T&R 2.5K
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- MOSFETs
- Package
- POWERDI5060-8
- Mounting Style
- SMD/SMT
- Packaging
- Reel
Technical Specifications
20 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 60 V
- Id - Continuous Drain Current
- 49 A
- Rds On - Drain-Source Resistance
- 16.8 mOhms
- Vgs - Gate-Source Voltage
- - 16 V, 16 V
- Vgs th - Gate-Source Threshold Voltage
- 2 V
- Qg - Gate Charge
- 32 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 51.7 W
Show more parameters (8)
- Channel Mode
- Enhancement
- Configuration
- Single
- Country of Origin
- CN
- Fall Time
- 38 ns
- Rise Time
- 25.7 ns
- Transistor Type
- 1 N-Channel
- Typical Turn-Off Delay Time
- 51.5 ns
- Typical Turn-On Delay Time
- 6.84 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.