Diodes Incorporated
DGTD65T50S1PT
IGBT Transistors IGBT 600V-X TO247 TUBE 0.45K
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- IGBT Transistors
- Package
- TO-247-3
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
12 parameters- Technology
- Si
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 650 V
- Collector-Emitter Saturation Voltage
- 1.85 V
- Maximum Gate Emitter Voltage
- 20 V
- Continuous Collector Current at 25 C
- 100 A
- Pd - Power Dissipation
- 375 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 175 C
- Continuous Collector Current Ic Max
- 100 A
- Gate-Emitter Leakage Current
- 100 nA
- Unit Weight
- 0.197534 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.