Diodes Incorporated
DMG9933USD-13
MOSFET P-Ch Dual MOSFE 20V VDSS 12V VGSS
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- MOSFET
- Series
- DMG9933
- Package
- SO-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
21 parameters- Technology
- Si
- Number of Channels
- 2 Channel
- Transistor Polarity
- P-Channel
- Vds - Drain-Source Breakdown Voltage
- 20 V
- Id - Continuous Drain Current
- 4.6 A
- Rds On - Drain-Source Resistance
- 55 mOhms, 55 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 1.1 V
- Vgs - Gate-Source Voltage
- 12 V
- Qg - Gate Charge
- 6.5 nC, 6.5 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 1.15 W
Show more parameters (9)
- Configuration
- Dual
- Channel Mode
- Enhancement
- Product
- MOSFET Small Signal
- Transistor Type
- 2 P-Channel
- Fall Time
- 22.19 ns, 22.19 ns
- Rise Time
- 10.29 ns, 10.29 ns
- Typical Turn-Off Delay Time
- 46.52 ns, 46.52 ns
- Typical Turn-On Delay Time
- 12.45 ns, 12.45 ns
- Unit Weight
- 0.002610 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.