Diodes Incorporated
DMC1229UFDB-13
MOSFET Comp ENH Mode FET 12V Vdss 8V VGss
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- MOSFET
- Series
- DMC1229
- Package
- DFN2020-B-6
- Mounting Style
- SMD/SMT
- Packaging
- Reel
- RoHS
- Compliant (source record)
Technical Specifications
20 parameters- Technology
- Si
- Number of Channels
- 2 Channel
- Transistor Polarity
- N-Channel, P-Channel
- Vds - Drain-Source Breakdown Voltage
- 12 V
- Id - Continuous Drain Current
- 5.6 A, 3.8 A
- Rds On - Drain-Source Resistance
- 17 mOhms, 37 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 400 mV, 1 V
- Vgs - Gate-Source Voltage
- 8 V
- Qg - Gate Charge
- 19.6 nC, 17.9 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 1.4 W
Show more parameters (8)
- Configuration
- Dual
- Channel Mode
- Enhancement
- Transistor Type
- 1 N-Channel, 1 P-Channel
- Fall Time
- 4.1 ns, 26.4 ns
- Rise Time
- 10.5 ns,11.5 ns
- Typical Turn-Off Delay Time
- 16.6 ns, 27.8 ns
- Typical Turn-On Delay Time
- 5 ns, 5.7 ns
- Unit Weight
- 0.000229 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.