Toshiba
TK200V65Z5,LQ
MOSFETs 650 V 0.200 Ohm N-ch MOSFET DFN 8 x 8 DTMOS
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- MOSFETs
- Package
- DFN-5
- Mounting Style
- SMD/SMT
- Packaging
- Reel
Technical Specifications
19 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 650 V
- Id - Continuous Drain Current
- 15 A
- Rds On - Drain-Source Resistance
- 200 mOhms
- Vgs - Gate-Source Voltage
- 30 V
- Vgs th - Gate-Source Threshold Voltage
- 4.5 V
- Qg - Gate Charge
- 26 nC
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 130 W
- Channel Mode
- Enhancement
Show more parameters (7)
- Configuration
- Single
- Country of Origin
- CN
- Fall Time
- 4.4 ns
- Rise Time
- 10 ns
- Transistor Type
- 1 N-Channel
- Typical Turn-Off Delay Time
- 60 ns
- Typical Turn-On Delay Time
- 35 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.