STMicroelectronics
2STR1160
Bipolar Transistors - BJT Low-Volt Fast Switch NPN Pwr Tran
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- Bipolar Transistors - BJT
- Series
- 2STR1160
- Package
- SOT-23-3
- Mounting Style
- SMD/SMT
- RoHS
- Compliant (source record)
Technical Specifications
15 parameters- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 60 V
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 5 V
- Maximum DC Collector Current
- 1 A
- Minimum Operating Temperature
- - 65 C
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 180 at 500 mA, 2 V
- Height
- 1.3 mm
- Length
- 3.04 mm
- Width
- 1.6 mm
Show more parameters (3)
- DC Collector/Base Gain hfe Min
- 180 at 500 mA, 2 V, 85 at 1 A, 2 V
- Pd - Power Dissipation
- 500 mW
- Unit Weight
- 0.000282 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.