Vishay / Siliconix
SISH106DN-T1-GE3
MOSFET 20V Vds; +/-12V Vgs PowerPAK 1212-8SH
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay / Siliconix
- Product Category
- MOSFET
- Series
- SIS
- Package
- PowerPAK1212-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
21 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 20 V
- Id - Continuous Drain Current
- 19.5 A
- Rds On - Drain-Source Resistance
- 6.2 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 600 mV
- Vgs - Gate-Source Voltage
- 12 V
- Qg - Gate Charge
- 27 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 3.8 W
Show more parameters (9)
- Configuration
- Single
- Channel Mode
- Enhancement
- Tradename
- TrenchFET, PowerPAK
- Transistor Type
- 1 N-Channel
- Forward Transconductance - Min
- 105 S
- Fall Time
- 12 ns
- Rise Time
- 15 ns
- Typical Turn-Off Delay Time
- 50 ns
- Typical Turn-On Delay Time
- 25 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.