Infineon Technologies
IPB70P04P4-09
MOSFET P-Ch -40V -70A D2PAK-2 OptiMOS-P2
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- MOSFET
- Series
- OptiMOS-P2
- Package
- TO-263-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
24 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- P-Channel
- Vds - Drain-Source Breakdown Voltage
- 40 V
- Id - Continuous Drain Current
- 70 A
- Rds On - Drain-Source Resistance
- 9.1 mOhms
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 54 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 75 W
- Configuration
- Single
Show more parameters (12)
- Qualification
- AEC-Q101
- Tradename
- OptiMOS
- Height
- 4.4 mm
- Length
- 10 mm
- Transistor Type
- 1 P-Channel
- Width
- 9.25 mm
- Fall Time
- 31 ns
- Rise Time
- 15 ns
- Typical Turn-Off Delay Time
- 24 ns
- Typical Turn-On Delay Time
- 19 ns
- Part # Aliases
- IPB70P04P409ATMA1 IPB7P4P49XT SP000735964
- Unit Weight
- 0.139332 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.