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Nexperia

BUK768R3-60E,118

MOSFET BUK768R3-60E/D2PAK/REEL 13" Q1

Basic Information

View Datasheet ↗
Manufacturer
Nexperia
Product Category
MOSFET
Package
TO-263-3
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
Compliant (source record)

Technical Specifications

20 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
60 V
Id - Continuous Drain Current
75 A
Rds On - Drain-Source Resistance
5.9 mOhms
Vgs th - Gate-Source Threshold Voltage
2.4 V
Vgs - Gate-Source Voltage
20 V
Qg - Gate Charge
43.1 nC
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
137 W
Configuration
Single
Show more parameters (8)
Channel Mode
Enhancement
Qualification
AEC-Q101
Transistor Type
1 N-Channel
Fall Time
27 ns
Rise Time
27 ns
Typical Turn-Off Delay Time
27 ns
Typical Turn-On Delay Time
14 ns
Unit Weight
0.077603 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

BUK768R3-60E,118 Specifications and Datasheet | ChipSourceHub