Nexperia
NGW75T65H3DFQ
IGBTs NGW75T65H3DF/SOT429-2/TO247-3L
Basic Information
View Datasheet ↗- Manufacturer
- Nexperia
- Product Category
- IGBTs
- Package
- TO-247-3
- Mounting Style
- Through Hole
Technical Specifications
11 parameters- Technology
- Si
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 650 V
- Collector-Emitter Saturation Voltage
- 1.6 V
- Continuous Collector Current at 25 C
- 80 A
- Pd - Power Dissipation
- 600 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 175 C
- Country of Origin
- CN
- Gate-Emitter Leakage Current
- 100 nA
- Part # Aliases
- 934665504127
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.