Vishay / Siliconix
SI2323DS-T1-GE3
MOSFET 20V 4.7A 1.25W 39 mohms @ 4.5V
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Brand
- Vishay / Siliconix
- Product Category
- MOSFET
- Series
- SI2
- Package
- SOT-23-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
26 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- P-Channel
- Vds - Drain-Source Breakdown Voltage
- 20 V
- Id - Continuous Drain Current
- 4.7 A
- Rds On - Drain-Source Resistance
- 39 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 400 mV
- Vgs - Gate-Source Voltage
- 4.5 V
- Qg - Gate Charge
- 19 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 1.25 W
Show more parameters (14)
- Configuration
- Single
- Channel Mode
- Enhancement
- Tradename
- TrenchFET
- Height
- 1.45 mm
- Length
- 2.9 mm
- Transistor Type
- 1 P-Channel
- Width
- 1.6 mm
- Forward Transconductance - Min
- 16 S
- Fall Time
- 48 ns
- Rise Time
- 43 ns
- Typical Turn-Off Delay Time
- 71 ns
- Typical Turn-On Delay Time
- 25 ns
- Part # Aliases
- SI2323DS-GE3
- Unit Weight
- 0.000282 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.