ROHM Semiconductor
EMX1FHAT2R
Bipolar Transistors - BJT NPN+NPN SOT-563 .15A 120 tohFE 50V
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-563-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Dual
- Collector- Base Voltage VCBO
- 60 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 400 mV
- Gain Bandwidth Product fT
- 180 MHz
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 560
- Continuous Collector Current
- 150 mA
- DC Collector/Base Gain hfe Min
- 120
- Pd - Power Dissipation
- 150 mW
Show more parameters (2)
- Qualification
- AEC-Q101
- Part # Aliases
- EMX1FHA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.