ROHM Semiconductor
QS6Z5TR
Bipolar Transistors - BJT PNP+NPN Driver Transistor
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- Bipolar Transistors - BJT
- Package
- SOT-457T-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
14 parameters- Transistor Polarity
- NPN, PNP
- Configuration
- Dual
- Collector- Emitter Voltage VCEO Max
- 50 V
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 6 V
- Collector-Emitter Saturation Voltage
- 130 mV, - 200 mV
- Maximum DC Collector Current
- 1 A, - 1 A
- Gain Bandwidth Product fT
- 360 MHz, 400 MHz
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 450 at 50 mA, 2 V, 450 at - 50 mA, - 2 V
- Continuous Collector Current
- 1 A, - 1 A
- DC Collector/Base Gain hfe Min
- 180 at 50 mA, 2 V, 180 at - 50 mA, - 2 V
Show more parameters (2)
- Pd - Power Dissipation
- 1.25 W
- Part # Aliases
- QS6Z5
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.