Infineon Technologies
IPD65R380E6ATMA1
MOSFET LOW POWER_LEGACY
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- MOSFET
- Series
- CoolMOS E6
- Package
- TO-252-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
25 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 650 V
- Id - Continuous Drain Current
- 10.6 A
- Rds On - Drain-Source Resistance
- 340 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 2.5 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 39 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 83 W
Show more parameters (13)
- Configuration
- Single
- Channel Mode
- Enhancement
- Tradename
- CoolMOS
- Height
- 2.3 mm
- Length
- 6.5 mm
- Transistor Type
- 1 N-Channel
- Width
- 6.22 mm
- Fall Time
- 8 ns
- Rise Time
- 7 ns
- Typical Turn-Off Delay Time
- 57 ns
- Typical Turn-On Delay Time
- 10 ns
- Part # Aliases
- IPD65R380E6 SP001117736
- Unit Weight
- 0.139332 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.