Infineon Technologies
BC817K40WH6327XTSA1
Bipolar Transistors - BJT AF TRANSISTOR
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- Bipolar Transistors - BJT
- Series
- BC817
- Package
- SOT-323-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Technology
- Si
- Transistor Polarity
- NPN
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 45 V
- Collector- Base Voltage VCBO
- 50 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 0.7 V
- Maximum DC Collector Current
- 1000 mA
- Gain Bandwidth Product fT
- 170 MHz
- Maximum Operating Temperature
- + 150 C
- DC Current Gain hFE Max
- 630 at 100 mA, 1 V
- Continuous Collector Current
- 500 mA
Show more parameters (4)
- DC Collector/Base Gain hfe Min
- 250 at 100 mA, 1 V
- Pd - Power Dissipation
- 250 mW
- Part # Aliases
- 817K-40W BC BC817K4WH6327XT H6327 SP000746850
- Unit Weight
- 0.000176 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.