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Toshiba

TK5R1P08QM,RQ

MOSFETs UMOS10 DPAK 80V 5.1mohm

Basic Information

View Datasheet ↗
Manufacturer
Toshiba
Product Category
MOSFETs
Series
UMOS X-H
Package
DPAK-2 (TO-252-2)
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

19 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
80 V
Id - Continuous Drain Current
84 A
Rds On - Drain-Source Resistance
5.1 mOhms
Vgs - Gate-Source Voltage
- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage
3.5 V
Qg - Gate Charge
56 nC
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
104 W
Channel Mode
Enhancement
Show more parameters (7)
Country of Origin
CN
Fall Time
68 ns
Rise Time
64 ns
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
119 ns
Typical Turn-On Delay Time
83 ns
Part # Aliases
TK5R1P08QM,RQ(S2

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

TK5R1P08QM,RQ Specifications and Datasheet | ChipSourceHub