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Vishay Semiconductors

SI5419DU-T1-GE3

MOSFETs -30V Vds 20V Vgs PowerPAK ChipFET

Basic Information

View Datasheet ↗
Manufacturer
Vishay
Brand
Vishay Semiconductors
Product Category
MOSFETs
Series
SI54
Package
ChipFET-8
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

18 parameters
Technology
Si
Transistor Polarity
P-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
30 V
Id - Continuous Drain Current
12 A
Rds On - Drain-Source Resistance
33 mOhms
Vgs - Gate-Source Voltage
- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V
Qg - Gate Charge
45 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
31 W
Show more parameters (6)
Channel Mode
Enhancement
Tradename
TrenchFET
Configuration
Single
Country of Origin
CN
Part # Aliases
SI5419DU-GE3
Unit Weight
0.002998 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

SI5419DU-T1-GE3 Specifications and Datasheet | ChipSourceHub