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Diodes Incorporated

DMTH61M8SPSQ-13

MOSFETs MOSFET BVDSS: 41V 60V PowerDI5060-8 T&R 2.5K

Basic Information

View Datasheet ↗
Manufacturer
Diodes Incorporated
Product Category
MOSFETs
Package
PowerDI5060-8
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

21 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
60 V
Id - Continuous Drain Current
100 A
Rds On - Drain-Source Resistance
1.6 mOhms
Vgs - Gate-Source Voltage
- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage
4 V
Qg - Gate Charge
130.6 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
167 W
Show more parameters (9)
Channel Mode
Enhancement
Configuration
Single
Country of Origin
CN
Fall Time
47.6 ns
Rise Time
28.5 ns
Transistor Type
1 N - Channel
Typical Turn-Off Delay Time
86.2 ns
Typical Turn-On Delay Time
11.3 ns
Unit Weight
0.003422 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

DMTH61M8SPSQ-13 Specifications and Datasheet | ChipSourceHub