Toshiba
2SA1162-Y(TLSPF,T)
Bipolar Transistors - BJT SM SIG POWER TRANS
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SA1162
- Package
- SOT-346-3
- Mounting Style
- SMD/SMT
- Packaging
- Reel
- RoHS
- Compliant (source record)
Technical Specifications
16 parameters- Transistor Polarity
- PNP
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- - 50 V
- Collector- Base Voltage VCBO
- - 50 V
- Emitter- Base Voltage VEBO
- - 5 V
- Maximum DC Collector Current
- 0.15 A
- Gain Bandwidth Product fT
- 80 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 125 C
- DC Current Gain hFE Max
- 400
- Height
- 1.1 mm
- Length
- 2.9 mm
Show more parameters (4)
- Width
- 1.5 mm
- Continuous Collector Current
- - 150 mA
- DC Collector/Base Gain hfe Min
- 70
- Pd - Power Dissipation
- 150 mW
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.