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Texas Instruments

CSD17576Q5B

MOSFET 30V, N-channel NexFET Pwr MOSFET

Basic Information

View Datasheet ↗
Manufacturer
Texas Instruments
Product Category
MOSFET
Series
CSD17576Q5B
Package
VSON-CLIP-8
Mounting Style
SMD/SMT
Packaging
Cut Tape
RoHS
E

Technical Specifications

24 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
30 V
Id - Continuous Drain Current
60 A
Rds On - Drain-Source Resistance
2.4 mOhms
Vgs th - Gate-Source Threshold Voltage
1.1 V
Vgs - Gate-Source Voltage
20 V
Qg - Gate Charge
53 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
125 W
Show more parameters (12)
Configuration
Single
Channel Mode
Enhancement
Tradename
NexFET
Height
1 mm
Length
6 mm
Transistor Type
1 N-Channel
Width
5 mm
Fall Time
3 ns
Rise Time
16 ns
Typical Turn-Off Delay Time
23 ns
Typical Turn-On Delay Time
5 ns
Unit Weight
0.003743 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

CSD17576Q5B Specifications and Datasheet | ChipSourceHub