ROHM Semiconductor
ES6U3T2CR
MOSFET 4V Drive Nch+SBD MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- MOSFET
- Series
- ES6U3
- Package
- SOT-563T-6
- Mounting Style
- SMD/SMT
- Packaging
- Reel
- RoHS
- Compliant (source record)
Technical Specifications
20 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel, SBD
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Id - Continuous Drain Current
- 1.4 A
- Rds On - Drain-Source Resistance
- 170 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 1 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 1.4 nC
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 800 mW
- Configuration
- Single
Show more parameters (8)
- Channel Mode
- Enhancement
- Transistor Type
- 1 N-Channel
- Fall Time
- 8 ns
- Rise Time
- 6 ns
- Typical Turn-Off Delay Time
- 13 ns
- Typical Turn-On Delay Time
- 6 ns
- Part # Aliases
- ES6U3
- Unit Weight
- 0.000106 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.