Infineon Technologies
IPL60R650P6SATMA1
MOSFET N-Ch 600V 6.7A ThinPAK 5x6
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- MOSFET
- Series
- CoolMOS P6
- Package
- ThinPAK-56-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
24 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 600 V
- Id - Continuous Drain Current
- 6.7 A
- Rds On - Drain-Source Resistance
- 650 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 4 V
- Vgs - Gate-Source Voltage
- 30 V
- Qg - Gate Charge
- 12 nC
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 56.8 W
Show more parameters (12)
- Configuration
- Single
- Tradename
- CoolMOS
- Height
- 1.1 mm
- Length
- 6 mm
- Transistor Type
- 1 N-Channel
- Width
- 5 mm
- Fall Time
- 14 ns
- Rise Time
- 7 ns
- Typical Turn-Off Delay Time
- 33 ns
- Typical Turn-On Delay Time
- 11 ns
- Part # Aliases
- IPL60R650P6S SP001163080
- Unit Weight
- 0.002677 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.