Infineon Technologies
IPD30N10S3L34ATMA1
MOSFET N-Ch 100V 30A DPAK-2 OptiMOS-T
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- MOSFET
- Series
- XPD30N10
- Package
- PG-TO-252-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
25 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 100 V
- Id - Continuous Drain Current
- 30 A
- Rds On - Drain-Source Resistance
- 31 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 1.2 V
- Vgs - Gate-Source Voltage
- 10 V
- Qg - Gate Charge
- 24 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 57 W
Show more parameters (13)
- Configuration
- Single
- Channel Mode
- Enhancement
- Qualification
- AEC-Q101
- Height
- 2.3 mm
- Length
- 6.5 mm
- Transistor Type
- 1 N-Channel
- Width
- 6.22 mm
- Fall Time
- 3 ns
- Rise Time
- 4 ns
- Typical Turn-Off Delay Time
- 18 ns
- Typical Turn-On Delay Time
- 6 ns
- Part # Aliases
- IPD30N10S3L-34 IPD3N1S3L34XT SP000261248
- Unit Weight
- 0.139332 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.