Vishay
SQJ120ELP-T1_GE3
MOSFETs N-CHANNEL 30-V (D-S) 175C MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- Vishay
- Product Category
- MOSFETs
- Series
- SQJ
- Package
- SO-8L
- Mounting Style
- SMD/SMT
Technical Specifications
13 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 30 V
- Id - Continuous Drain Current
- 206 A
- Rds On - Drain-Source Resistance
- 1.74 mOhms
- Vgs - Gate-Source Voltage
- - 20 V, 20 V
- Vgs th - Gate-Source Threshold Voltage
- 2 V
- Qg - Gate Charge
- 74 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 130 W
Show more parameters (1)
- Country of Origin
- CN
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.