ROHM Semiconductor
RF7G120BJFRATCR
MOSFETs DFN2020 P-CH 40V 12A
Basic Information
View Datasheet ↗- Manufacturer
- ROHM Semiconductor
- Product Category
- MOSFETs
- Package
- DFN2020-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
21 parameters- Technology
- Si
- Transistor Polarity
- P-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 40 V
- Id - Continuous Drain Current
- 12 A
- Rds On - Drain-Source Resistance
- 61 mOhms
- Vgs - Gate-Source Voltage
- - 20 V, 5 V
- Vgs th - Gate-Source Threshold Voltage
- 2.5 V
- Qg - Gate Charge
- 15.5 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 23 W
Show more parameters (9)
- Channel Mode
- Enhancement
- Configuration
- Single
- Country of Origin
- TH
- Fall Time
- 9.8 ns
- Forward Transconductance - Min
- 3.7 S
- Rise Time
- 4.6 ns
- Transistor Type
- 1 P-Channel
- Typical Turn-Off Delay Time
- 36 ns
- Typical Turn-On Delay Time
- 6.6 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.