STMicroelectronics
STGWA100H65DFB2
IGBTs Trench gate field-stop, 650 V, 100 A, high-speed HB2 series IGBT in a TO-247 lon
Basic Information
View Datasheet ↗- Manufacturer
- STMicroelectronics
- Product Category
- IGBTs
- Package
- TO-247-3
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
11 parameters- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 650 V
- Collector-Emitter Saturation Voltage
- 1.55 V
- Maximum Gate Emitter Voltage
- - 20 V, 20 V
- Continuous Collector Current at 25 C
- 145 A
- Pd - Power Dissipation
- 441 W
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Country of Origin
- CN
- Gate-Emitter Leakage Current
- 250 nA
- Unit Weight
- 0.215171 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.