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Toshiba

TK065N65Z,S1F

MOSFETs 270W 1MHz TO-247

Basic Information

View Datasheet ↗
Manufacturer
Toshiba
Product Category
MOSFETs
Series
TK065N65Z
Package
TO-247-3
Mounting Style
Through Hole
Packaging
Cut Tape

Technical Specifications

23 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
650 V
Id - Continuous Drain Current
30 A
Rds On - Drain-Source Resistance
65 mOhms
Vgs - Gate-Source Voltage
- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage
4 V
Qg - Gate Charge
62 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
270 W
Show more parameters (11)
Channel Mode
Enhancement
Tradename
DTMOSVI
Configuration
Single
Country of Diffusion
CN
Country of Origin
CN
Fall Time
4.2 ns
Rise Time
62 ns
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
130 ns
Typical Turn-On Delay Time
110 ns
Unit Weight
0.211644 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

TK065N65Z,S1F Specifications and Datasheet | ChipSourceHub