Taiwan Semiconductor
TSM60NC1R5CH C5G
MOSFETs 600V, 3A, Single N-Channel Power MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- Taiwan Semiconductor
- Product Category
- MOSFETs
- Package
- TO-251-3
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
21 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 600 V
- Id - Continuous Drain Current
- 3 A
- Rds On - Drain-Source Resistance
- 1.5 Ohms
- Vgs - Gate-Source Voltage
- - 20 V, 20 V
- Vgs th - Gate-Source Threshold Voltage
- 4.3 V
- Qg - Gate Charge
- 7.6 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 39 W
Show more parameters (9)
- Channel Mode
- Enhancement
- Qualification
- AEC-Q101
- Configuration
- Single
- Country of Origin
- TW
- Fall Time
- 41 ns
- Rise Time
- 18 ns
- Typical Turn-Off Delay Time
- 34 ns
- Typical Turn-On Delay Time
- 18 ns
- Part # Aliases
- TSM60NC1R5CH
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.