Renesas Electronics
RJK6035DPP-A0#T2
MOSFETs POWER TRS1 HV-MOS/IGBT
Basic Information
View Datasheet ↗- Manufacturer
- Renesas Electronics
- Product Category
- MOSFETs
- Package
- TO-220FP-3
- Mounting Style
- Through Hole
- Packaging
- Tray
Technical Specifications
18 parameters- Technology
- Si
- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 600 V
- Id - Continuous Drain Current
- 6 A
- Rds On - Drain-Source Resistance
- 1.37 Ohms
- Vgs - Gate-Source Voltage
- - 30 V, 30 V
- Vgs th - Gate-Source Threshold Voltage
- 4.5 V
- Qg - Gate Charge
- 20 nC
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 125 W
- Channel Mode
- Enhancement
Show more parameters (6)
- Country of Origin
- CN
- Fall Time
- 5.3 ns
- Rise Time
- 4.6 ns
- Transistor Type
- 1 N-Channel
- Typical Turn-Off Delay Time
- 65 ns
- Typical Turn-On Delay Time
- 12 ns
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.