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Vishay / Siliconix

SIR826LDP-T1-RE3

MOSFETs PPAKSO8 N-CH 80V 21.3A

Basic Information

View Datasheet ↗
Manufacturer
Vishay
Brand
Vishay / Siliconix
Product Category
MOSFETs
Package
PowerPAK-SO-8
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

23 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
80 V
Id - Continuous Drain Current
86 A
Rds On - Drain-Source Resistance
4.15 mOhms
Vgs - Gate-Source Voltage
- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage
2.4 V
Qg - Gate Charge
60.5 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
83 W
Show more parameters (11)
Channel Mode
Enhancement
Tradename
TrenchFET
Configuration
Single
Country of Origin
CN
Fall Time
17 ns
Forward Transconductance - Min
60 S
Rise Time
75 ns
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
40 ns
Typical Turn-On Delay Time
30 ns
Unit Weight
0.017870 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

SIR826LDP-T1-RE3 Specifications and Datasheet | ChipSourceHub