Infineon Technologies
IPB80N06S4L05ATMA2
MOSFET N-Ch 60V 80A D2PAK-2
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- MOSFET
- Series
- IPB80N06S4L
- Package
- TO-263-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
14 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 60 V
- Id - Continuous Drain Current
- 80 A
- Rds On - Drain-Source Resistance
- 4.8 mOhms
- Configuration
- Single
- Qualification
- AEC-Q101
- Height
- 4.4 mm
- Length
- 10 mm
- Transistor Type
- 1 N-Channel
- Width
- 9.25 mm
Show more parameters (2)
- Part # Aliases
- IPB80N06S4L-05 IPB8N6S4L5XT SP001028720
- Unit Weight
- 0.068654 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.