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ROHM Semiconductor

RD3U080AAFRATL

MOSFETs TO252 250V 8A N-CH MOSFET

Basic Information

View Datasheet ↗
Manufacturer
ROHM Semiconductor
Product Category
MOSFETs
Package
TO-252-3
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

21 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
250 V
Id - Continuous Drain Current
8 A
Rds On - Drain-Source Resistance
300 mOhms
Vgs - Gate-Source Voltage
- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage
5 V
Qg - Gate Charge
25 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Pd - Power Dissipation
85 W
Show more parameters (9)
Channel Mode
Enhancement
Qualification
AEC-Q101
Configuration
Single
Country of Origin
KR
Fall Time
15 ns
Rise Time
40 ns
Typical Turn-Off Delay Time
40 ns
Typical Turn-On Delay Time
30 ns
Part # Aliases
RD3U080AAFRA

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

RD3U080AAFRATL Specifications and Datasheet | ChipSourceHub