Bourns
BIDW75N65EH5
IGBTs IGBT Discrete 650V, 75A, High speed switching in TO-247-3L
Basic Information
View Datasheet ↗- Manufacturer
- Bourns
- Product Category
- IGBTs
- Series
- BID
- Package
- TO-247-3
- Mounting Style
- Through Hole
- Packaging
- Tube
Technical Specifications
12 parameters- Technology
- Si
- Configuration
- Single
- Collector- Emitter Voltage VCEO Max
- 650 V
- Collector-Emitter Saturation Voltage
- 1.65 V
- Maximum Gate Emitter Voltage
- 20 V
- Continuous Collector Current at 25 C
- 150 A
- Pd - Power Dissipation
- 394 W
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 175 C
- Continuous Collector Current Ic Max
- 150 A
- Country of Origin
- CN
- Gate-Emitter Leakage Current
- 100 nA
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.