Infineon Technologies
IPDQ60R016CM8XTMA1
SiC MOSFETs HIGH POWER_NEW
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- SiC MOSFETs
- Series
- 600V CM8
- Package
- HDSOP-22
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
23 parameters- Transistor Polarity
- N-Channel
- Number of Channels
- 1 Channel
- Vds - Drain-Source Breakdown Voltage
- 600 V
- Id - Continuous Drain Current
- 135 A
- Rds On - Drain-Source Resistance
- 16 mOhms
- Vgs - Gate-Source Voltage
- - 20 V, + 20 V
- Vgs th - Gate-Source Threshold Voltage
- 4.7 V
- Qg - Gate Charge
- 171 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 625 W
- Channel Mode
- Enhancement
Show more parameters (11)
- Tradename
- CoolMOS
- Configuration
- Single
- Country of Assembly
- MY
- Country of Diffusion
- AT
- Country of Origin
- DE
- Fall Time
- 4.4 ns
- Rise Time
- 9 ns
- Technology
- SiC
- Typical Turn-Off Delay Time
- 125.7 ns
- Typical Turn-On Delay Time
- 29.4 ns
- Part # Aliases
- IPDQ60R016CM8 SP005578048
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.