Toshiba
2SC3265-Y,LF
Bipolar Transistors - BJT Bias Resistor Built-in transistor
Basic Information
View Datasheet ↗- Manufacturer
- Toshiba
- Product Category
- Bipolar Transistors - BJT
- Series
- 2SC3265
- Package
- TO-236MOD-3
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
12 parameters- Transistor Polarity
- NPN
- Collector- Emitter Voltage VCEO Max
- 25 V
- Collector- Base Voltage VCBO
- 30 V
- Emitter- Base Voltage VEBO
- 5 V
- Collector-Emitter Saturation Voltage
- 0.4 V
- Maximum DC Collector Current
- 800 mA
- Gain Bandwidth Product fT
- 120 MHz
- DC Current Gain hFE Max
- 320
- Continuous Collector Current
- 800 mA
- DC Collector/Base Gain hfe Min
- 40
- Pd - Power Dissipation
- 200 mW
- Unit Weight
- 0.000423 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.