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Vishay / Siliconix

SQ3985EV-T1_BE3

MOSFETs P-CHANNEL 20V (D-S)

Basic Information

View Datasheet ↗
Manufacturer
Vishay
Brand
Vishay / Siliconix
Product Category
MOSFETs
Series
SQ
Package
TSOP-6
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

21 parameters
Technology
Si
Transistor Polarity
P-Channel
Number of Channels
2 Channel
Vds - Drain-Source Breakdown Voltage
20 V
Id - Continuous Drain Current
3.9 A
Rds On - Drain-Source Resistance
130 mOhms
Vgs - Gate-Source Voltage
- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage
1.5 V
Qg - Gate Charge
3.1 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
3 W
Show more parameters (9)
Channel Mode
Enhancement
Tradename
TrenchFET
Country of Origin
TW
Fall Time
20 ns
Rise Time
26 ns
Transistor Type
2 P-Channel
Typical Turn-Off Delay Time
40 ns
Typical Turn-On Delay Time
5 ns
Part # Aliases
SQ3985EV-T1_GE3

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

SQ3985EV-T1_BE3 Specifications and Datasheet | ChipSourceHub