Diodes Incorporated
DTM3A25P20NFDB-7
MOSFET Transistor Array
Basic Information
View Datasheet ↗- Manufacturer
- Diodes Incorporated
- Product Category
- MOSFET
- Package
- U-DFN2020-B-6
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
20 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel, PNP
- Vds - Drain-Source Breakdown Voltage
- 20 V
- Id - Continuous Drain Current
- 630 mA
- Rds On - Drain-Source Resistance
- 300 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 500 mV
- Vgs - Gate-Source Voltage
- 6 V
- Qg - Gate Charge
- 736.6 pC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 2.47 W
Show more parameters (8)
- Configuration
- Single
- Channel Mode
- Enhancement
- Transistor Type
- 1 N-Channel
- Fall Time
- 12.3 ns
- Rise Time
- 7.4 ns
- Typical Turn-Off Delay Time
- 26.7 ns
- Typical Turn-On Delay Time
- 5.1 ns
- Unit Weight
- 0.000238 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.