onsemi
NSVS1001CLTWG
Bipolar Transistors - BJT 100V 2.5A PNP LOW SATURATION BJT
Basic Information
View Datasheet ↗- Manufacturer
- onsemi
- Product Category
- Bipolar Transistors - BJT
- Series
- NSS1001CL
- Package
- LFPAK-8
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
Technical Specifications
18 parameters- Technology
- Si
- Transistor Polarity
- PNP
- Configuration
- Single
- Maximum DC Collector Current
- 4 A
- Collector- Emitter Voltage VCEO Max
- 100 V
- Collector- Base Voltage VCBO
- 120 V
- Emitter- Base Voltage VEBO
- 7 V
- Collector-Emitter Saturation Voltage
- 300 mV
- Pd - Power Dissipation
- 2.2 W
- Gain Bandwidth Product fT
- 200 MHz
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
Show more parameters (6)
- Continuous Collector Current
- 2.5 A
- Country of Assembly
- PH
- Country of Diffusion
- JP
- Country of Origin
- PH
- DC Collector/Base Gain hfe Min
- 140
- DC Current Gain hFE Max
- 400
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.