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Vishay / Siliconix

SUP90N06-6M0P-E3

MOSFET 60V 90A 272W 6.0mohm @ 10V

Basic Information

View Datasheet ↗
Manufacturer
Vishay
Brand
Vishay / Siliconix
Product Category
MOSFET
Series
SUP
Package
TO-220-3
Mounting Style
Through Hole
Packaging
Tube
RoHS
E

Technical Specifications

22 parameters
Technology
Si
Number of Channels
1 Channel
Transistor Polarity
N-Channel
Vds - Drain-Source Breakdown Voltage
60 V
Id - Continuous Drain Current
90 A
Rds On - Drain-Source Resistance
5 mOhms
Vgs th - Gate-Source Threshold Voltage
2.5 V
Vgs - Gate-Source Voltage
20 V
Qg - Gate Charge
120 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
272 W
Show more parameters (10)
Configuration
Single
Channel Mode
Enhancement
Tradename
TrenchFET
Transistor Type
1 N-Channel
Forward Transconductance - Min
58 S
Fall Time
8 ns
Rise Time
10 ns
Typical Turn-Off Delay Time
25 ns
Typical Turn-On Delay Time
16 ns
Unit Weight
0.211644 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

SUP90N06-6M0P-E3 Specifications and Datasheet | ChipSourceHub