Infineon Technologies
IPB019N08N3 G
MOSFET N-Ch 80V 180A D2PAK-6 OptiMOS 3
Basic Information
View Datasheet ↗- Manufacturer
- Infineon
- Brand
- Infineon Technologies
- Product Category
- MOSFET
- Series
- OptiMOS 3
- Package
- TO-263-7
- Mounting Style
- SMD/SMT
- Packaging
- Cut Tape
- RoHS
- Compliant (source record)
Technical Specifications
26 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 80 V
- Id - Continuous Drain Current
- 180 A
- Rds On - Drain-Source Resistance
- 1.6 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 2 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 206 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Pd - Power Dissipation
- 300 W
Show more parameters (14)
- Configuration
- Single
- Channel Mode
- Enhancement
- Tradename
- OptiMOS
- Height
- 4.4 mm
- Length
- 10 mm
- Transistor Type
- 1 N-Channel
- Width
- 9.25 mm
- Forward Transconductance - Min
- 103 S
- Fall Time
- 33 ns
- Rise Time
- 73 ns
- Typical Turn-Off Delay Time
- 86 ns
- Typical Turn-On Delay Time
- 28 ns
- Part # Aliases
- IPB019N08N3GATMA1 IPB19N8N3GXT SP000444110
- Unit Weight
- 0.056438 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.