IXYS
IXFH60N50P3
MOSFET 500V 60A 0.1Ohm PolarP3 Power MOSFET
Basic Information
View Datasheet ↗- Manufacturer
- IXYS
- Product Category
- MOSFET
- Series
- IXFH60N50
- Package
- TO-247-3
- Mounting Style
- Through Hole
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
17 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 500 V
- Id - Continuous Drain Current
- 60 A
- Rds On - Drain-Source Resistance
- 100 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 5 V
- Vgs - Gate-Source Voltage
- 30 V
- Qg - Gate Charge
- 96 nC
- Pd - Power Dissipation
- 1040 W
- Configuration
- Single
- Tradename
- HiPerFET
Show more parameters (5)
- Transistor Type
- 1 N-Channel
- Forward Transconductance - Min
- 60 S, 35 S
- Fall Time
- 8 ns
- Rise Time
- 16 ns
- Unit Weight
- 0.056438 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.