IXYS
IXFN160N30T
MOSFET TRENCH HIPERFET PWR MOSFET 300V 130A
Basic Information
View Datasheet ↗- Manufacturer
- IXYS
- Product Category
- MOSFET
- Series
- IXFN160N30
- Package
- SOT-227-4
- Mounting Style
- Chassis Mount
- Packaging
- Tube
- RoHS
- Compliant (source record)
Technical Specifications
26 parameters- Technology
- Si
- Number of Channels
- 1 Channel
- Transistor Polarity
- N-Channel
- Vds - Drain-Source Breakdown Voltage
- 300 V
- Id - Continuous Drain Current
- 130 A
- Rds On - Drain-Source Resistance
- 19 mOhms
- Vgs th - Gate-Source Threshold Voltage
- 5 V
- Vgs - Gate-Source Voltage
- 20 V
- Qg - Gate Charge
- 335 nC
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Pd - Power Dissipation
- 900 W
Show more parameters (14)
- Configuration
- Single
- Channel Mode
- Enhancement
- Tradename
- HiPerFET
- Height
- 12.22 mm
- Length
- 38.23 mm
- Transistor Type
- 1 N-Channel
- Type
- GigaMOS Power MOSFET
- Width
- 25.42 mm
- Forward Transconductance - Min
- 100 S
- Fall Time
- 25 ns
- Rise Time
- 38 ns
- Typical Turn-Off Delay Time
- 105 ns
- Typical Turn-On Delay Time
- 37 ns
- Unit Weight
- 1.058219 oz
Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.