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Vishay Semiconductors

SQJA00EP-T1_GE3

MOSFETs 60V Vds 30A Id AEC-Q101 Qualified

Basic Information

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Manufacturer
Vishay
Brand
Vishay Semiconductors
Product Category
MOSFETs
Series
SQA
Package
PowerPAK-SO-8-4
Mounting Style
SMD/SMT
Packaging
MouseReel

Technical Specifications

23 parameters
Technology
Si
Transistor Polarity
N-Channel
Number of Channels
1 Channel
Vds - Drain-Source Breakdown Voltage
60 V
Id - Continuous Drain Current
30 A
Rds On - Drain-Source Resistance
10.5 mOhms
Vgs - Gate-Source Voltage
- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage
2.5 V
Qg - Gate Charge
35 nC
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Pd - Power Dissipation
48 W
Show more parameters (11)
Channel Mode
Enhancement
Qualification
AEC-Q101
Configuration
Single
Country of Origin
CN
Fall Time
22 ns
Forward Transconductance - Min
36 S
Rise Time
3 ns
Transistor Type
1 N-Channel
Typical Turn-Off Delay Time
23 ns
Typical Turn-On Delay Time
13 ns
Unit Weight
0.017870 oz

Technical data, historical stock, and reference prices are for verification only. Confirm current supply, quotation, and lead time through inquiry. Similar parameters do not establish direct replacement.

SQJA00EP-T1_GE3 Specifications and Datasheet | ChipSourceHub